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High quality and wafer-scale cubic silicon carbide single crystals
  • +6
  • Guobin Wang,
  • Da Sheng,
  • Yunfan Yang,
  • Hui Li,
  • Congcong Chai,
  • Zhenkai Xie,
  • Wenjun Wang,
  • Jian-gang Guo,
  • Xiaolong Chen
Guobin Wang
Chinese Academy of Sciences
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Da Sheng
Chinese Academy of Sciences
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Yunfan Yang
Chinese Academy of Sciences
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Hui Li
Chinese Academy of Sciences
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Congcong Chai
Chinese Academy of Sciences
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Zhenkai Xie
Chinese Academy of Sciences
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Wenjun Wang
Chinese Academy of Sciences
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Jian-gang Guo
Chinese Academy of Sciences
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Xiaolong Chen
Chinese Academy of Sciences

Corresponding Author:[email protected]

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Abstract

Cubic silicon carbide (3C-SiC) has superior mobility and thermal conduction than that of widely applied hexagonal 4H-SiC. Moreover, much lower concentration of interfacial traps between insulating oxide gate and 3C-SiC helps fabricate reliable and long-life devices like metal-oxide-semiconductor field effect transistors (MOSFETs). However, the growth of high quality and wafer-scale 3C-SiC crystals has remained a big challenge up to now despite of decades-long efforts by researchers because of its easy transformation into other polytypes during growth, limiting the development of 3C-SiC based devices. Herein, we report that 3C-SiC can be made thermodynamically favored from nucleation to growth on a 4H-SiC substrate by top-seeded solution growth technique (TSSG), beyond what’s expected by classic nucleation theory. This enables the steady growth of high-quality and large-size 3C-SiC crystals (2~4-inch in diameter and 4.0~10.0 mm in thickness) sustainable. The as-grown 3C-SiC crystals are free of other polytypes and have high crystalline quality. Our findings broaden the mechanism of hetero-seed crystal growth and provide a feasible route to mass production of 3C-SiC crystals, offering new opportunities to develop power electronic devices potentially with better performances than those based on 4H-SiC.
07 Aug 2023Submitted to Energy & Environmental Materials
09 Aug 2023Submission Checks Completed
09 Aug 2023Assigned to Editor
09 Aug 2023Review(s) Completed, Editorial Evaluation Pending
09 Aug 2023Editorial Decision: Accept