Figure 3. Characterizing the crystallinity and defects of 3C-SiC wafer. a) X-ray diffraction (XRD) spectrum for 3C-SiC wafer, showing the growing surface is (111) plane. b) X-ray rocking curve (XRC) of (111) plane, and the FWHM ranges from 28.8 to 32.4 arcsec. The inset shows the distribution of 9 measured points. c-f) OM (Optical microscope) images for 3C-SiC wafer after etch at 500 ℃ for 10 min in KOH melt, revealing the existence of SF (stacking fault), TSDs (threading screw dislocations), and TEDs (threading edge dislocations) defects in the 3C-SiC wafers. g, h) HAADF-STEM images of a SF composed of three layers of SiC.