References
1 Yablonovitch, E., Kane, E.O.: ‘Band structure engineering of
semiconductor lasers for optical communications’J. Lightwave
Technol. , 1988, 6 , (8), pp. 1292–1299.
2 Agrawal, G.P.: ‘Fiber-optic communication systems’ (Wiley, 2010, 4th
ed)
3 Matsumoto, A., Masuda, W., Akahane, K., Umezawa, T., Yamamoto, N.,
Kita, T.: ‘1.55-μm Si-Photonics-Based Heterogeneous Tunable Laser
Integrated with Highly Stacked QD-RSOA’2021.
4 Javadi, A., Söllner, I., Arcari, M., et al. : ‘Single-photon
non-linear optics with a quantum dot in a waveguide’Nat Commun ,
2015, 6 , (1), p. 8655.
5 Arakawa, Y., Sakaki, H.: ‘Multidimensional quantum well laser and
temperature dependence of its threshold current’Appl. Phys.
Lett. , 1982, 40 , (11), pp. 939–941.
6 Kirstaedter, N., Ledentsov, N.N., Grundmann, M., et al. : ‘Low
threshold, large To injection laser emission from (InGa)As quantum
dots’Electronics Letters , 1994, 30 , (17), pp.
1416–1417.
7 Kageyama, T., Nishi, K., Yamaguchi, M., Mochida, R., Maeda, Y.,
Takemasa, K.: ‘Extremely High Temperature (220°C) Continuous-Wave
Operation of 1300-nm-range Quantum-Dot Lasers’, in 2011 Conference on
Lasers and Electro-Optics Europe and 12th European Quantum Electronics
Conference, (IEEE, 2011), p. 1
8 Caroff, P., Paranthoen, C., Platz, C., et al. : ‘High-gain and
low-threshold InAs quantum-dot lasers on InP’Appl. Phys. Lett. ,
2005, 87 , (24), p. 243107.
9 Akahane, K., Naokatsu Yamamoto, Tetsuya Kawanishi: ‘Characteristics of
highly stacked quantum dot laser fabricated on InP(311)B substrate’, in
‘2009 IEEE International Conference on Indium Phosphide & Related
Materials’ Related Materials (IPRM), (IEEE, 2009), pp. 73–74
10 Sichkovskyi, V.I., Waniczek, M., Reithmaier, J.P.: ‘High-gain
wavelength-stabilized 1.55 μm InAs/InP(100) based lasers with reduced
number of quantum dot active layers’Appl. Phys. Lett. , 2013,102 , (22), p. 221117.
11 Dery, H., Benisty, E., Epstein, A., et al. : ‘On the nature of
quantum dash structures’Journal of Applied Physics , 2004,95 , (11), pp. 6103–6111.
12 Reithmaier, J.P., Eisenstein, G., Forchel, A.: ‘InAs/InP Quantum-Dash
Lasers and Amplifiers’Proc. IEEE , 2007, 95 , (9), pp.
1779–1790.
13 Li, Z., Shutts, S., Xue, Y., Luo, W., Lau, K.M., Smowton, P.M.:
‘Optical gain and absorption of 1.55 μ m InAs quantum dash lasers
on silicon substrate’Appl. Phys. Lett. , 2021, 118 , (13),
p. 131101.
14 Homeyer, E., Piron, R., Grillot, F., et al. : ‘Demonstration of
a Low Threshold Current in 1.54 µm InAs/InP(311)B Quantum Dot Laser with
Reduced Quantum Dot Stacks’Jpn. J. Appl. Phys. , 2007,46 , (10A), pp. 6903–6905.
15 Akahane, K., Yamamoto, N., Kawanishi, T.: ‘High Characteristic
Temperature of Highly Stacked Quantum-Dot Laser for 1.55-μm
Band’IEEE Photon. Technol. Lett. , 2010, 22 , (2), pp.
103–105.
16 Bhowmick, S., Baten, M.Z., Frost, T., Ooi, B.S., Bhattacharya, P.:
‘High Performance InAs/In0.53Ga0.23Al0.24As/InP Quantum Dot 1.55 μm
Tunnel Injection Laser’IEEE J. Quantum Electron. , 2014,50 , (1), pp. 7–14.
The below line is approximately the maximum length of a manuscript
allowed (if it were to fill all four columns).
This document is intended as a guide for format and length; your
manuscript will be copyedited and formatted further at proof stage.