Conclusion: In summary, we have proposed a novel self-rectifying
memristor based on Pt/HZO/TiN structure. The devices show large memory
window (104) and low power consumption (0.03 nW @
HRS). These properties make the devices especially suitable for
low-power artificial synapse and embedded non-volatile memory
applications.
Acknowledgments: This research was funded by the National Natural
Science Foundation of China under Grant Nos. 61974164, 62074166,
61804181, 61704191, 62004219 and 62004220, as well as the National
University of Defense Technology Research Funding Program Grant No.
ZK19-05.
Conflict of interest: There is no conflict of interest in this
paper.
Data availability statement: Data available on request from the
authors (the data that support the findings of this study are available
from the corresponding author upon reasonable request).
2022 The Authors. Electronics Letters published by John Wiley
& Sons Ltd on behalf of The Institution of Engineering and Technology
This is an open access article under the terms of the Creative Commons
Attribution License, which permits use, distribution and reproduction in
any medium, provided the original work is properly cited.
Received: xx January 2021 Accepted: xx March 2021
doi: 10.1049/ell2.10001
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