Conclusion: In summary, we have proposed a novel self-rectifying memristor based on Pt/HZO/TiN structure. The devices show large memory window (104) and low power consumption (0.03 nW @ HRS). These properties make the devices especially suitable for low-power artificial synapse and embedded non-volatile memory applications.
Acknowledgments: This research was funded by the National Natural Science Foundation of China under Grant Nos. 61974164, 62074166, 61804181, 61704191, 62004219 and 62004220, as well as the National University of Defense Technology Research Funding Program Grant No. ZK19-05.
Conflict of interest: There is no conflict of interest in this paper.
Data availability statement: Data available on request from the authors (the data that support the findings of this study are available from the corresponding author upon reasonable request).
 2022 The Authors. Electronics Letters published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology
This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
Received: xx January 2021 Accepted: xx March 2021
doi: 10.1049/ell2.10001
References
  1. Gao R., Lei D., He Z., et al. : Layer-dependent resistance variability assessment on 2048 8-layer 3D vertical RRAMs,Electron. Lett. , 55 (17), 955-957 (2019)
  2. Jeon K., Kim J., Ryu J. J., et al. : Self-rectifying resistive memory in passive crossbar arrays, Nat. Commun. ,12 (2968), 1-15 (2021)
  3. Wang W., Wang R., Shi T., et al. : A self-rectification and quasi-linear analogue memristor for artificial neural networks,IEEE Electron Device Lett. , 40 (9), 1407-1410 (2019)
  4. Li C., Han L., Jiang H., et al. : Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors,Nature Commun. , 8 (15666), 1-9 (2017)
  5. Song B., Xu H., Liu H., et al. : Impact of threshold voltage variation on 1S1R crossbar array with threshold switching selectors,Appl. Phys. A , 123 (356), 1-7 (2017)
  6. Zhang L., Cosemans S., Wouters D. J., et al. : Cell variability impact on the one-selector one-resistor cross-point array performance,IEEE Trans. Electron Device , 62 (11), 3490-3497 (2015)
  7. Zhu L. Q., Wan C. J., Guo L. Q., et al. , Artificial synapse network on inorganic proton conductor for neuromorphic systems,Nature Commun. , 5 (1), 3158-1–3158-7 (2014)
  8. Huang P., Chen S., Zhao Y., et al. : Self-selection RRAM cell with sub- μA switching current and robust reliability fabricated by high-K /metal gate CMOS compatible technology, IEEE Trans. Electron Device , 63 (11), 4295-4301 (2016)