Fig. 5 (a) Area dependence of the read current. (b) Fitted I-V
curves with SCLC conduction mechanisms.
Then, the underlying mechanism of the self-rectifying Pt/HZO/TiN device
is investigated. Fig. 5a shows the area dependence of read
currents in LRS and HRS, respectively. The read current for each device
area were obtained from 20 switching cycles. As the device area increase
from 9 µm2 to 2500 µm2, the read
currents of both LRS and HRS increase approximately linearly, indicating
an interface-type rather than localization-type resistive switching
behavior. Fig. 5b shows the fitted I-V curves with SCLC
conduction mechanism. A typical I-V characteristic plotted in a
log-log curve for SCLC is bounded by the three limited curves, ohm’s law
(I∝V ), traps filled limit current (I∝V2 )
and Child’s law. The result in Fig. 5b is consistent with the
features of SCLC conduction mechanism.
Finally, a benchmark especially on rectify ratio, memory window, read
power and endurance is provided in Table 1. Compared with previous
self-rectifying devices, the proposed Pt/HZO/TiN devices in our work
show competitive advantages, such as the largest memory window, lowest
read power in HRS state.
Table 1. Performance benchmarking between our self-rectifying device and
previous results.