Device Structure Rectifying Ratio Memory Window Read Power (HRS, nW)
Endurance
1 [8] TiN/Al-HfOx/SiO2/Si 300 ~7 0.2 105
2 [3] Pt/C/NbOx/TiN 106 ~25 100 ~3×103
3 [2]
Ru/HSO/Al2O3/ HSO/TiN
104
~5
0.8
106
This work Pt/HZO/TiN 104 104 0.03 106