Figure S6. Device-to-device variation of the VO2memristor . a) I-V characteristics of the device measured in 10 different VO2 devices. b) Distributions ofV th, V hold with 50 repeated I-V cycles in 10 VO2 devices. c) Distributions of high and low resistance states with 50 repeatedI-V cycles in 10 VO2 devices.