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Crosstalk Reduction between Microstrip Lines using TL-Shaped Defected Microstrip Structure
  • ChenLong Li,
  • yafei wang,
  • xuehua Li
ChenLong Li
Beijing Information Science and Technology University

Corresponding Author:bjfslcl@163.com

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yafei wang
Beijing Information Science and Technology University
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xuehua Li
Beijing Information Science and Technology University
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A method to reduce crosstalk using TL-shaped defect microstrip structure (DMS) is proposed to solve the far-end crosstalk between microstrip lines. This method optimizes the ratio of the capacitive coupling and the inductive coupling between the coupled microstrip lines by etching the TL-shaped DMS on the microstrip line and reduces the strength of the electromagnetic (EM) coupling, which can achieve crosstalk suppression. The equivalent circuit model, S-parameters and full-wave EM simulations are used to analyze the crosstalk between the microstrip lines etched with and without the TL-shaped DMS. High Frequency Structure Simulator (HFSS) software simulation and samples test results show that the TL-shaped DMS can effectively reduce the far-end crosstalk while guaranteeing the transmission ability of microstrip line to the signal. The maximum far-end crosstalk can be reduced by 42dB in the frequency range of 0–8 GHz and the test results of the samples are in good agreement with the simulation results.
18 Mar 2022Submitted to Engineering Reports
22 Mar 2022Submission Checks Completed
22 Mar 2022Assigned to Editor
25 Mar 2022Reviewer(s) Assigned
01 Jun 20221st Revision Received
02 Jun 2022Assigned to Editor
02 Jun 2022Submission Checks Completed
06 Jun 2022Reviewer(s) Assigned
28 Jun 2022Editorial Decision: Revise Minor
09 Jul 20222nd Revision Received
11 Jul 2022Assigned to Editor
11 Jul 2022Submission Checks Completed
12 Jul 2022Editorial Decision: Accept
31 Jul 2022Published in Engineering Reports. 10.1002/eng2.12559